Carrier Transport and Photoresponse in GeSe/MoS 2 Heterojunction p–n Diodes
نویسندگان
چکیده
منابع مشابه
High-frequency, 6.2 Å pN heterojunction diodes
Sb-based pN heterojunction diodes at 6.2 Å, consisting of narrow bandgap p-type In0.27Ga0.73Sb and wide bandgap n-type In0.69Al0.41As0.41Sb0.59, have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density. S-parameter measurements and subsequent analysis show that these diodes have RC-cutoff frequencies over 1...
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ژورنال
عنوان ژورنال: Small
سال: 2018
ISSN: 1613-6810,1613-6829
DOI: 10.1002/smll.201704559